SD2931-10

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 125 V
Gate-Source Breakdown Voltage : +/- 20 V
Output Power : 150 W
Packaging : Bulk
Continuous Drain Current : 20 A
Package / Case : M174
Frequency : 230 MHz
Gain : 15 dB at 175 MHz


Pinout




Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain Source Voltage	125	V
VDGR	Drain-Gate Voltage (RGS = 1M)	125	V
VGS	Gate-Source Voltage	±20	V
ID	Drain Current	20	A
PDISS	Power Dissipation	389	W
Tj	Max. Operating Junction Temperature	200
TSTG	Storage Temperature	-65 to 150

Description

The SD2931-10 is a gold metallized N-Channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50V dc large signal applications up to 230 MHz.

The SD2931-10 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25 % lower thermal resistance), representing the best-in-class transistors for ISM applications.

Parameters:

Technical/Catalog Information	SD2931-10
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	N-Channel
Voltage - Rated	125V
Current Rating	20A
Package / Case	M174
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SD2931 10 SD293110 497 5467 ND 4975467ND 497-5467