Transistors RF Bipolar Power NPN 28V 470-860MHz
SD4100: Transistors RF Bipolar Power NPN 28V 470-860MHz
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| Configuration : | Single Dual Base | Maximum Operating Frequency : | 860 MHz |
| Collector- Emitter Voltage VCEO Max : | 32 V | Emitter- Base Voltage VEBO : | 3.5 V |
| Continuous Collector Current : | 16 A | Maximum DC Collector Current : | 16 A |
| Power Dissipation : | 220 W | Package / Case : | M173 |
| Packaging : | Bulk |

| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 65 | V |
| VCEO | Collector-Emitter Voltage | 32 | V |
| VEBO | Emitter-Base Voltage | 3.5 | V |
| IC | Device Current | 16 | A |
| PDISS | Power Dissipation | 220 | W |
| TJ | Junction Temperature | +200 | °C |
| TSTG | Storage Temperature | - 65 to +150 | °C |
The SD4100 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in UHF and Band IV, V television transmitters and transposers.