Transistors RF MOSFET Power N-Ch 65 Volt 4 Amp
SD57030-01: Transistors RF MOSFET Power N-Ch 65 Volt 4 Amp
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Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 1 GHz | Gain : | 13 dB at 945 MHz |
Output Power : | 30 W | Drain-Source Breakdown Voltage : | 65 V |
Continuous Drain Current : | 4 A | Gate-Source Breakdown Voltage : | +/- 20 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | M250 |
Packaging : | Bulk |
Symbol | Parameter | Value | Unit |
V(BR)DSS | Drain Source Voltage | 65 | V |
VGS | Gate-Source Voltage | ± 20 | V |
ID | Drain Current | 4 | A |
PDISS | Power Dissipation (@ Tc= 70oC) | 74 | W |
TJ | Max. Operating Junction Temperature | 200 | °C |
TSTG | Storage Temperature | - 65 to +150 | °C |
The SD57030-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030-01 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base stations applications requiring high linearity.
Technical/Catalog Information | SD57030-01 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | LDMOS |
Voltage - Rated | 65V |
Current Rating | 1uA |
Package / Case | M250 |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SD57030 01 SD5703001 497 5476 ND 4975476ND 497-5476 |