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Part Number: SD57030-01

 

MFG: ST

 

 

Description: The SD57030-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor ...


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SD57030-01 General Description


The SD57030-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030-01 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base stations applications requiring high linearity.

SD57030-01 Maximum Ratings

Symbol Parameter Value Unit
V(BR)DSS Drain Source Voltage 65 V
VGS Gate-Source Voltage ± 20 V
ID Drain Current 4 A
PDISS Power Dissipation (@ Tc= 70oC) 74 W
TJ Max. Operating Junction Temperature 200 °C
TSTG Storage Temperature - 65 to +150 °C

SD57030-01 Connection Diagram

SD57030-01 Connection Diagram

SD57030-01 datasheet

SD57030-01
PDF/DataSheet Download

  • Datasheet: SD57030-01
  • File Size: 75338 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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