SD57030

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Package / Case : M243
Packaging : Bulk
Continuous Drain Current : 4 A
Output Power : 30 W
Gain : 13 dB at 945 MHz


Pinout




Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain-Source Voltage	65	V
VDGR	Drain-Gate Voltage (RGS = 1 MW)	65	V
VGS	Gate-Source Voltage	+ 20	V
ID	Drain Current	4	A
PDISS	Power Dissipation (@ Tc= 70oC)	74	W
TJ	Max. Operating Junction Temperature	200	°C
TSTG	Storage Temperature	- 65 to +150	°C

Description

The SD57030 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.

Parameters:

Technical/Catalog Information	SD57030
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	LDMOS
Voltage - Rated	65V
Current Rating	1uA
Package / Case	M243
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SD57030 SD57030 497 5475 ND 4975475ND 497-5475