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Part Number: SD57030

 

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Description: The SD57030 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor des...


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SD57030 General Description


The SD57030 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57030 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for base station applications requiring high linearity.

SD57030 Maximum Ratings

Symbol Parameter Value Unit
V(BR)DSS Drain-Source Voltage 65 V
VDGR Drain-Gate Voltage (RGS = 1 MW) 65 V
VGS Gate-Source Voltage + 20 V
ID Drain Current 4 A
PDISS Power Dissipation (@ Tc= 70oC) 74 W
TJ Max. Operating Junction Temperature 200 °C
TSTG Storage Temperature - 65 to +150 °C

SD57030 Connection Diagram

SD57030 Connection Diagram

SD57030 datasheet

SD57030
PDF/DataSheet Download

  • Datasheet: SD57030
  • File Size: 268363 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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