SD57045-01

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Output Power : 45 W
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Packaging : Bulk
Package / Case : M250
Continuous Drain Current : 5 A
Gain : 13 dB at 945 MHz


Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain Source Voltage	65	V
VDGR	Drain-Gate Voltage (RGS = 1MW)	65	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current	5	A
PDISS	Power Dissipation (@ Tc= 70 oC)	93	W
Tj	Max. Operating Junction Temperature	200
TSTG	Storage Temperature	-65 to 200

Description

The SD57045-01 is a common source N-Channel Enhancement-Mode Lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57045-01 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base stations applications requiring high linearity.

Parameters:

Technical/Catalog Information	SD57045-01
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	LDMOS
Voltage - Rated	65V
Current Rating	1uA
Package / Case	M250
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SD57045 01 SD5704501 497 5478 ND 4975478ND 497-5478