SD57060-01

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Packaging : Bulk
Package / Case : M250
Continuous Drain Current : 7 A
Output Power : 60 W
Gain : 13 dB at 945 MHz


Pinout




Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain Source Voltage	65	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current	7	A
PDISS	Power Dissipation (@ Tc= 70oC)	118	W
TJ	Max. Operating Junction Temperature	200	°C
TSTG	Storage Temperature	- 65 to +150	°C

Description

The SD57060-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57060-01 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base station applications requiring high linearity.

Parameters:

Technical/Catalog Information	SD57060-01
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	LDMOS
Voltage - Rated	65V
Current Rating	1uA
Package / Case	M250
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SD57060 01 SD5706001 497 5480 ND 4975480ND 497-5480