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Part Number: SD57060-01

 

MFG: ST

 

 

Description: The SD57060-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor ...


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SD57060-01 General Description


The SD57060-01 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57060-01 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base station applications requiring high linearity.

SD57060-01 Maximum Ratings

Symbol Parameter Value Unit
V(BR)DSS Drain Source Voltage 65 V
VGS Gate-Source Voltage ± 20 V
ID Drain Current 7 A
PDISS Power Dissipation (@ Tc= 70oC) 118 W
TJ Max. Operating Junction Temperature 200 °C
TSTG Storage Temperature - 65 to +150 °C

SD57060-01 Connection Diagram

SD57060-01 Connection Diagram

SD57060-01 datasheet

SD57060-01
PDF/DataSheet Download

  • Datasheet: SD57060-01
  • File Size: 73622 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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