SD57060

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 65 V
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Package / Case : M243
Packaging : Bulk
Continuous Drain Current : 7 A
Output Power : 60 W
Gain : 13 dB at 945 MHz


Pinout




Description

The SD57060 is a common source N-Channel enhancement-mode iaternal field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0GHz.

Features of the SD57060 are:(1)excellent thermal stability;(2)common source configuration;(3)Pout=60W with 11.5dB gain@945 MHz;(4)BeO free package.

The absolute maximum ratings of the SD57060 can be summarized as:(1)drain source voltage:65V;(2)gate-source voltage:±20V;(3)drain current:7A;(4)power dissipation:108W;(5)max.operating junction temperature:200;(6)storage temperature:-65 to 150.

If you want to know more information such as the electrical characteristics about the SD57060, please download the datasheet in www.seekic.com or www.chinaicmart.com .

Parameters:

Technical/Catalog Information	SD57060
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	LDMOS
Voltage - Rated	65V
Current Rating	1uA
Package / Case	M243
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SD57060 SD57060 497 5479 ND 4975479ND 497-5479