Features: · Designed for GSM BTS Transmitter Applications· Low Insertion Loss and Small Size· 8.5 x 5.8 mm Surface-Mount Case· Unbalanced Input and OutputSpecifications Rating Value Units Maximum Incident Power in Passband +10 dBm Max. DC voltage between any 2 terminals ...
SF1084B: Features: · Designed for GSM BTS Transmitter Applications· Low Insertion Loss and Small Size· 8.5 x 5.8 mm Surface-Mount Case· Unbalanced Input and OutputSpecifications Rating Value U...
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DescriptionThe SF1000GX24 is designed for high power control applications.TOSHIBA is continually w...
· Designed for GSM BTS Transmitter Applications
· Low Insertion Loss and Small Size
· 8.5 x 5.8 mm Surface-Mount Case
· Unbalanced Input and Output
|
Rating |
Value |
Units |
| Maximum Incident Power in Passband |
+10 |
dBm |
| Max. DC voltage between any 2 terminals |
30 |
VDC |
| Storage Temperature Range |
-40 to +85 |
|
| Max Soldering Profile |
235 for 90 s | |
Notes:
1. Unless noted otherwise, all specifications apply over the operating temperature range with filter soldered to the specified demonstration board with impedance matching to 50 W and measured with 50 W network analyzer.
2. Unless noted otherwise, all frequency specifications are referenced to the nominal center frequency, fc.
3. Rejection is measured as attenuation below the minimum IL point in the passband. Rejection in final user application is dependent
on PCB layout and external impedance matching design. See Application Note No. 42 for details.
4. "LRIP" or "L" after the part number indicates "low rate initial production" and "ENG" or "E" indicates "engineering prototypes."
5. The design, manufacturing process, and specifications of this filter are subject to change.
6. Either Port 1 or Port 2 may be used for either input or output in the design. However, impedances and impedance matching may
vary between Port 1 and Port 2, so that the filter must always be installed in one direction per the circuit design.
7. US and international patents may apply.
8. RFM, stylized RFM logo, and RF Monolithics, Inc. are registered trademarks of RF Monolithics, Inc.
9. ãCopyright 1999, RF Monolithics Inc.
10. Electrostatic Sensitive Device. Observe precautions for handling.