MOSFET
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 250 V |
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 8.7 A |
Resistance Drain-Source RDS (on) : | 0.8 Ohms | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole |
Package / Case : | TO-3P |
Symbol |
Characteristic |
Value |
Units | |
VDSS |
Drain-to-Source Voltage |
-250 |
V | |
ID |
Continuous Drain Current (TC=25oC) |
-8.7 |
A | |
Continuous Drain Current (TC=100oC) |
-6.0 | |||
IDM |
Drain Current-Pulsed |
1 |
-35 |
A |
VGS |
Gate-to-Source Voltage |
±30 |
V | |
EAS |
Single Pulsed Avalanche Energy |
2 |
431 |
mJ |
IAR |
Avalanche Current |
1 |
-8.7 |
A |
EAR |
Repetitive Avalanche Energy |
1 |
12.6 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
3 |
-4.8 |
V/ns |
PD |
Total Power Dissipation (TC=25oC) Linear Derating Factor |
126 1.0 |
W W/oC | |
TJ , TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +175 |
oC | |
TL |
Maximum Lead Temp. for Soldering Purposes, from case for 5-seconds |
300 |