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SFH9305

Features: · Compact type· GaAs infrared emitter (940 nm)· Silicon phototransistor detector with daylight-cutoff filter· Package using SFH 4110 and SFH 3100 F as basic componentsApplication· Speed control· Motor control· Monitoring of paper feed in printers, copiers, facsimiles·Disk drives· Control...

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SeekIC No. : 004488512 Detail

SFH9305: Features: · Compact type· GaAs infrared emitter (940 nm)· Silicon phototransistor detector with daylight-cutoff filter· Package using SFH 4110 and SFH 3100 F as basic componentsApplication· Speed co...

SFH9305 Data Sheet

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Part Number:
SFH9305
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

· Compact type
·  GaAs infrared emitter (940 nm)
·  Silicon phototransistor detector with daylight-cutoff filter
·  Package using SFH 4110 and SFH 3100 F as basic components


Application

· Speed control
· Motor control
· Monitoring of paper feed in printers, copiers, facsimiles
· Disk drives
· Control of print head in printers
· Coin detection
· Optoelectronic switches


Pinout

Connection Diagram


Specifications

Bezeichnung
Description		 Symbol
Symbol		 Wert
Value		 Einheit
Unit
Sender (GaAs-Diode)
Emitter (GaAs Diode)
Sperrspannung
Reverse voltage		 VR 5 V
Durchlaßstrom
Forward current		 IF (DC) 60 mA
Verlustleistung
Power dissipation		 Ptot 100 mW
Wärmewiderstand
Thermal resistance		 RthJA 280 K/W
Empfänger (Si-Fototransistor)
Detector (Silicon Phototransistor)
Kollektor-Emitter-Spannung
Collector-emitter voltage		 VCE 30 V
Kollektor-Emitter-Spannung, (t 2 min)
Collector-emitter voltage, (t 2 min)		 VCE 70
Emitter-Kollektor-Spannung
Emitter-collector voltage		 VEC 7
Kollektorstrom
Collector current		 IC 50 mA
Verlustleistung
Total power dissipation		 Ptot 150 mW
Wärmewiderstand
Thermal resistance		 RthJA 280 K/W
Gabellichtschranke
Slotted Interrupter
Lagertemperatur
Storage temperature range		 Tstg 40 ... + 85 °C
Betriebstemperatur
Operating temperature range		 Top 40 ... + 85
Elektrostatische Entladung
Electrostatic discharge		 ESD 2 kV
Sender (GaAs-Diode)
Emitter (GaAs Diode)
Wellenlänge der Strahlung
Wavelength of peak emission		 lpeak 940 nm
Durchlabspannung
Forward voltage
IF = 20 mA, tp = 20 ms		 VF 1.2 ( 1.4) V
Sperrstrom
Reverse current
VR = 5 V		 IR 0.01 ( 1) mA
Kapazität
Capacitance
VR = 0 V, f = 1 MHz		 C0 16 pF


 




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