SFH9500

Features: · Suitable for surface mounting (SMT)· Compact type· GaAs infrared emitter (940 nm)· Silicon phototransistor detector with daylight-cutoff filter· With positioning pin· Suitable for pick and place· High sensing accuracy (slit width: 0.5 mm)· Wide gap between emitter and detector (5 mm)· ...

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SFH9500 Picture
SeekIC No. : 004488514 Detail

SFH9500: Features: · Suitable for surface mounting (SMT)· Compact type· GaAs infrared emitter (940 nm)· Silicon phototransistor detector with daylight-cutoff filter· With positioning pin· Suitable for pick a...

floor Price/Ceiling Price

Part Number:
SFH9500
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/23

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Product Details

Description



Features:

· Suitable for surface mounting (SMT)
· Compact type
· GaAs infrared emitter (940 nm)
· Silicon phototransistor detector with daylight-cutoff filter
· With positioning pin
· Suitable for pick and place
· High sensing accuracy (slit width: 0.5 mm)
· Wide gap between emitter and detector (5 mm)
· High stability on pcb due to large width of device (6.8 mm)



Application

· Speed control
· Motor control
· Monitoring of paper feed in printers, copiers, facsimiles
· Disk drives
· Control of print head in printers
· Coin detection
· Optoelectronic switches



Specifications

Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
Sender (GaAs-Diode)
Emitter (GaAs Diode)
Sperrspannung
Reverse voltage
VR 5 V
Durchla?strom
Forward current
IF (DC) 60 mA
Verlustleistung
Power dissipation
Ptot 100 mW
W?rmewiderstand
Thermal resistance
RthJA 280 K/W
Empf?nger (Si-Fototransistor)
Detector (Silicon Phototransistor)
Kollektor-Emitter-Spannung
Collector-emitter voltage
VCE 30 V
Kollektor-Emitter-Spannung, (t 2 min)
Collector-emitter voltage, (t 2 min)
VCE 70
Emitter-Kollektor-Spannung
Emitter-collector voltage
VEC 7
Kollektorstrom
Collector current
IC 50 mA
Verlustleistung
Total power dissipation
Ptot 150 mW
W?rmewiderstand
Thermal resistance
RthJA 280 K/W
Gabellichtschranke
Slotted Interrupter
Lagertemperatur
Storage temperature range
Tstg 40 ... + 85 °C
Betriebstemperatur
Operating temperature range
Top 40 ... + 85
Elektrostatische Entladung
Electrostatic discharge
ESD 2 kV
Sender (GaAs-Diode)
Emitter (GaAs Diode)
Wellenl?nge der Strahlung
Wavelength of peak emission
lpeak 940 nm
Durchlabspannung
Forward voltage
IF = 20 mA, tp = 20 ms
VF 1.2 ( 1.4) V
Sperrstrom
Reverse current
VR = 5 V
IR 0.01 ( 1) mA
Kapazit?t
Capacitance
VR = 0 V, f = 1 MHz
C0 16 pF


 




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