SFS9610

MOSFET P-CH/200V/1.4A/3OHM

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SFS9610 Picture
SeekIC No. : 00151789 Detail

SFS9610: MOSFET P-CH/200V/1.4A/3OHM

floor Price/Ceiling Price

US $ .25~.52 / Piece | Get Latest Price
Part Number:
SFS9610
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.52
  • $.43
  • $.31
  • $.25
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 1.4 A
Resistance Drain-Source RDS (on) : 3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Continuous Drain Current : 1.4 A
Drain-Source Breakdown Voltage : - 200 V
Resistance Drain-Source RDS (on) : 3 Ohms


Features:

` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -200V
` Low RDS(ON) : 2.25   (Typ.)



Specifications

Symbol
Characteristic
Value
Units
VDSS

Drain-to-Source Voltage

-200
V
ID
Continuous Drain Current ( TC=25)
-1.4
A
Continuous Drain Current ( TC=100)
-0.9
IDM
Drain Current-Pulsed
-6.0
A
VGS
Gate-to-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
91
mJ
IAR
Avalanche Current
-1.4
A
EAR
Repetitive Avalanche Energy
1.3
mJ
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
PD
Total Power Dissipation ( TC=25)
Linear Derating Factor
13
0.1
W
W/°C
TJ,TSTG
Operating Junction and
Storage Temperature Range
- 55 to +150
°C
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
300



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