MOSFET P-CH/200V/3A/1.5OHM
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 200 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | - 3 A | ||
| Resistance Drain-Source RDS (on) : | 1.5 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220F | Packaging : | Tube |
|
Symbol |
Characteristic |
Value |
Units |
|
VDSS |
Drain-to-Source Voltage |
-200 |
V |
|
ID |
Continuous Drain Current ( TC=25) |
-3.0 |
A
|
| Continuous Drain Current ( TC=100) |
-1.9 | ||
|
IDM |
Drain Current-Pulsed |
-12 |
A |
|
VGS |
Gate-to-Source Voltage |
±30 |
V |
|
EAS |
Single Pulsed Avalanche Energy |
240 |
mJ |
|
IAR |
Avalanche Current |
-3.0 |
A |
|
EAR |
Repetitive Avalanche Energy |
2.8 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-5.0 |
V/ns |
|
PD |
Total Power Dissipation ( TC=25) Linear Derating Factor |
28
0.22 |
W
W/°C |
|
TJ,TSTG |
Operating Junction and Storage Temperature Range |
- 55 to +150 |
°C
|
|
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds |
300 |