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SFS9630

MOSFET PCh/200V/4.4a/0.8Ohm

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SeekIC No. : 00160988 Detail

SFS9630: MOSFET PCh/200V/4.4a/0.8Ohm

SFS9630 Data Sheet

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Part Number:
SFS9630
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : - 4.4 A
Resistance Drain-Source RDS (on) : 0.8 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Drain-Source Breakdown Voltage : - 200 V
Continuous Drain Current : - 4.4 A
Resistance Drain-Source RDS (on) : 0.8 Ohms


Features:

Avalanche  Rugged  Technology
Rugged  Gate  Oxide  Technology 
Lower  Input  Capacitance
Improved  Gate  Charge
Extended  Safe  Operating  Area
Lower  Leakage  Current  :  10 A (Max.)  @  VDS  = -200V
Low  RDS(ON)   :  0.581  (Typ.)



Specifications

Symbol Characteristic Value Units
VDSS
 Drain-to-Source Voltage -200 V
ID

Continuous Drain Current (TC=25) 		-4.4 A
Continuous Drain Current(TC=100) -3.3
IDM
 Drain Current-Pulsed                                  -18 A
VGS
 Gate-to-Source Voltage
 ±30 V
EAS
 Single Pulsed Avalanche Energy               258 mJ
IAR
 Avalanche Current                                    -4.4 A
EAR
 Repetitive Avalanche Energy                   3.3 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
PD
 Total Power Dissipation (TC=25)         
Linear Derating Factor		 33
0.26		 W

W/
TJ , TSTG
 Operating Junction and
Storage Temperature Range		 - 55 to +150
TL
 Maximum Lead Temp. for Soldering
Purposes, 1/8 " from case for 5-seconds		 300



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