IGBT Transistors
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Features: • Short circuit rated 10us @ TC = 100°C, VGE = 15V• High speed switchingR...
Features: • Short circuit rated 10us @ TC = 100°C, VGE = 15V• High speed switchingR...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1200 V |
Collector-Emitter Saturation Voltage : | 2.3 V | Maximum Gate Emitter Voltage : | +/- 25 V |
Gate-Emitter Leakage Current : | 100 uA | Power Dissipation : | 180 W |
Maximum Operating Temperature : | + 150 C | Package / Case : | TO-3P-3 |
Packaging : | Tube |