SGH80N60UFDTU

IGBT Transistors N-CH/100V/0.58/28A

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SGH80N60UFDTU: IGBT Transistors N-CH/100V/0.58/28A

floor Price/Ceiling Price

US $ 2.6~3.56 / Piece | Get Latest Price
Part Number:
SGH80N60UFDTU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~244
  • 244~250
  • 250~500
  • 500~1000
  • Unit Price
  • $3.56
  • $3.28
  • $2.99
  • $2.6
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 2.1 V Maximum Gate Emitter Voltage : +/- 20 V
Continuous Collector Current at 25 C : 80 A Gate-Emitter Leakage Current : +/- 100 nA
Power Dissipation : 195 W Maximum Operating Temperature : + 150 C
Package / Case : TO-3P-3 Packaging : Tube    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Collector-Emitter Saturation Voltage : 2.1 V
Continuous Collector Current at 25 C : 80 A
Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : +/- 100 nA
Package / Case : TO-3P-3
Power Dissipation : 195 W


Parameters:

Technical/Catalog InformationSGH80N60UFDTU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)80A
Vce(on) (Max) @ Vge, Ic2.6V @ 15V, 40A
Power - Max195W
Mounting TypeThrough Hole
Package / CaseTO-3P
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SGH80N60UFDTU
SGH80N60UFDTU



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