SI2303BDS-T1-E3

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 0.2 Ohms
Package / Case : TO-236-3
Continuous Drain Current : 1.3 A


Description

The SI2303BDS-T1-E3 is a kind of P-Channel, 30-V (D-S) MOSFET.

What comes next is about the maximum ratings of SI2303BDS-T1-E3 at TA=25: (1)drain-source voltage, VDS: -30 V; (2)gate-source voltage, VGS: ±20 V; (3)continuous drain current (TJ=150): -1.3 A at TA=25 and -1.0 A at TA=70; (4)pulsed drain current, IDM: -10 A; (5)continuous source current (diode conduction), IS: -0.6 A; (6)power dissipation, PD: 0.7 W at TA=25 and 0.45 W at TA=70; (7)operating junction and storage temperature range, TJ and Tstg: -55 to 150.

The following is about the static specifications of SI2303BDS-T1-E3 at TJ=25: (1)the minimum V(BR)DSS (drain-source breakdown voltage) is -30 V at VGS=0 V, ID=-10A; (2)the minimum VGS(th) (Gate-Threshold Voltage) is -1.0 V and the maximum is -3.0 V at VGS=VDS, ID=-250A; (3)the maximum IGSS (Gate-Body Leakage) is ±100 nA at VDS=0 V, VGS=±20 V; (4)the minimum ID(on) (On-State Drain Current) is -6 A at VDS-5 V, VGS=-10 V; (5)the minimum gfs (forward transconductance) is 2.0 S at VDS=-5 V, ID=-1.7 A ; (6)the minimum VSD (Diode Forward Voltage) is -0.85 V and the typical is -1.2 V at IS=-0.75 A, VGS=0 V.