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SI2304DS

Features: · TrenchMOS™ technology· Very fast switching· Subminiature surface mount package.Application·Battery management·High speed switch·Low power DC to DC converter.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj = 25 to 150 °...

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SeekIC No. : 004489974 Detail

SI2304DS: Features: · TrenchMOS™ technology· Very fast switching· Subminiature surface mount package.Application·Battery management·High speed switch·Low power DC to DC converter.PinoutSpecifications ...

SI2304DS Data Sheet

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Part Number:
SI2304DS
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· TrenchMOS™ technology
· Very fast switching
· Subminiature surface mount package.


Application

·Battery management
·High speed switch
·Low power DC to DC converter.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150 °C - 30 V
VDGR drain-gate voltage (DC) Tj = 25 to 150 °C; RGS = 20 kW - 30 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3 - 1.7 A
Tsp = 70 °C; VGS = 4.5 V; Figure 2 - 1.1 A
IDM peak drain current Tsp = 25 °C; pulsed; tp 10 ms; Figure 3 - 7.5 A
Ptot total power dissipation Tsp = 25 °C; Figure 1 - 0.83 W
Tstg storage temperature   -65 +150
Tj operating junction temperature   -65 +150
Source-drain diode
IS source (diode forward) current (DC) Tsp = 25 °C   0.83 A
ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp 10 ms - 3.3 A



Description

SI2304DS N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology
Product availability:
SI2304DS in SOT23.


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