SI3442DV

MOSFET SSOT6 SINGLE NCH

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SeekIC No. : 00160125 Detail

SI3442DV: MOSFET SSOT6 SINGLE NCH

floor Price/Ceiling Price

Part Number:
SI3442DV
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 8 V Continuous Drain Current : - 4.1 A
Resistance Drain-Source RDS (on) : 0.039 Ohms Configuration : Single Triple Drain Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : Super SOT-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 8 V
Resistance Drain-Source RDS (on) : 0.039 Ohms
Package / Case : Super SOT-6
Configuration : Single Triple Drain Dual Source
Continuous Drain Current : - 4.1 A


Features:

·4.1 A, 20 V. RDS(ON) = 0.06 W @ VGS = 4.5 V
                      RDS(ON) = 0.075 W @ VGS =2.7 V.
·Proprietary SuperSOTTM-6 package design using copper
·ead frame for superior thermal and electrical capabilities.
·High density cell design for extremely low RDS(ON).
·Exceptional on-resistance and maximum DC current capability.



Pinout

  Connection Diagram


Specifications

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage 8 V
ID Drain Current Continuous (Note 1a)
                       Pulsed
4.1 A
15
PD Maximum Power Dissipation (Note 1a) 
                                             (Note 1b)
                                              (Note 1c)
1.6 W
1
0.8
TJ, TSTG Operating and Storage Junction Temperature Range 55 to +150 °C



Description

These N-Channel logic level enhancement mode power field effect transistors SI3442DV are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. SI3442DV is particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package




Parameters:

Technical/Catalog InformationSI3442DV
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C4.1A
Rds On (Max) @ Id, Vgs60 mOhm @ 4.1A, 4.5V
Input Capacitance (Ciss) @ Vds 365pF @ 10V
Power - Max800mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs14nC @ 4.5V
Package / CaseSSOT-6
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SI3442DV
SI3442DV



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