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SI4435BDY-T1-GE3

MOSFET 30V 9.1A 2.5W 20mohm @ 10V

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SeekIC No. : 00162026 Detail

SI4435BDY-T1-GE3: MOSFET 30V 9.1A 2.5W 20mohm @ 10V

SI4435BDY-T1-GE3 Data Sheet

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Part Number:
SI4435BDY-T1-GE3
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/24

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 7 A
Resistance Drain-Source RDS (on) : 20 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Resistance Drain-Source RDS (on) : 20 mOhms
Continuous Drain Current : 7 A
Package / Case : SOIC-8 Narrow


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