MOSFET 30/8V 8.8/5.7A
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 30 V at N Channel, 8 V at P Channel | ||
Gate-Source Breakdown Voltage : | +/- 20 V, +/- 8 V | Continuous Drain Current : | 6.3 A at N Channel, 4.1 A at P Channel | ||
Resistance Drain-Source RDS (on) : | 18 mOhms at N Channel, 42 mOhms at 4.5 V at P Channel | Configuration : | Dual Common Quad Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |