MOSFET 30V 4.9/3.9A 2W
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| Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 3.7 A at N Channel, 3 A at P Channel | ||
| Resistance Drain-Source RDS (on) : | 53 mOhms at N Channel, 80 mOhms at P Channel | Configuration : | Dual Dual Drain | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOIC-8 Narrow | Packaging : | Reel |