SI4800DY-TI-E3

The features of SI4800DY-TI-E3 are: (1)Low on-state resistance; (2)Fast switching; (3)TrenchMOS TM technology.

The following is about the absolute maximum ratings of SI4800DY-TI-E3: (1)drain-source voltage (DC): 30V at Tj = 25 to 150 °C; (2)gate-source voltage (DC): ±20 V; (3)drain current: 9A at Tamb = 25 °C; pulsed; tp 10 s and 7A at Tamb = 70 °C; pulsed; tp 10 s; (4)peak drain current: 40A max at Tamb = 25 °C; pulsed; tp 10 ms; (5)total power dissipation: 2.5 W at Tamb = 25 °C; pulsed; tp 10 s and 1.6 W at Tamb = 70 °C; pulsed; tp 10 s; (6)storage temperature: -55 to +150 °C; (7)operating junction temperature: -55 to +150 °C.

The electrical characteristics of the SI4800DY-TI-E3 are: (1)gate-source threshold voltage: 0.8V min at ID = 250 mA; VDS = VGS; Tj = 25 °C; (2)drain-source leakage current: 1A max at VDS = 24 V; VGS = 0 V, Tj = 25 °C and 5A at Tj = 55 °C; (3)gate-source leakage current: 100nA max at VGS = ±20 V; VDS = 0 V; (4)On-state drain current: 30A min at VDS 5; VGS = 10 V; (5)drain-source on-state resistance: 15.5m typ and 18.5m max at VGS = 10 V; ID = 9 A or 27.5m typ and 33m max at VGS = 4.5 V; ID = 7 A.