SI4835DY-T1

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 125 C
Package / Case : SOIC-8 Narrow
Resistance Drain-Source RDS (on) : 19 mOhms
Continuous Drain Current : 8 A
Gate-Source Breakdown Voltage : +/- 25 V


Description

The SI4835DY-T1 is designed as one kind of P-channel logic level PowerTrench MOSFET that is produced using Fairchild Semiconductor's advanced Power-Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. This device can be used in battery protection, load switch, motor drives. Features of the SI4835DY-T1 are:(1)high power and current handling capability;(2)high performance trench technology for extremely low RDS(ON);(3)fast switching speed;(4)low gate charge (19nC typical);(5)extended VGSS range (±25V) for battery applications.

The absolute maximum ratings of the SI4835DY-T1 can be summarized as:(1)drain-source voltage:-30 V;(2)gate-source voltage:±25 V;(3)drain current-continuous:-8.8 A;(4)drain current-pulsed:-50 A;(5)operating and storage junction temperature range:-55 to +150 °C;(6)thermal resistance, junction-to-ambient:50°C/W;(7)thermal resistance, junction-to-case:25 °C/W.

The electrical characteristics Si4838BDY TA=25°C unless otherwise noted:(1)drain-source breakdown voltage:-30 V;(2)breakdown voltage temperature coefficient:-24 mV/°C;(3)zero gate voltage drain current:-1 A;(4)gate-body leakage current, forward:100 nA;(5)gate-body leakage current, reverse:-100 nA;(6)gate threshold voltage:-1 to -3 V;(7)gate threshold voltage temperature coefficient:5 mV/°C;(8)on-state drain current:-25 A;(9)forward transconductance:20 S;(10)input capacitance:1680 pF;(11)output capacitance:545 pF;(12)reverse transfer capacitance:220 pF. If you want to know more information such as the electrical characteristics about the SI4835DY-T1,please download the datasheet in www.seekic.com or www.chinaicmart.com .