MOSFET 60V 8.5A 3.3W 22mohm @ 10V
SI4850EY-T1-GE3: MOSFET 60V 8.5A 3.3W 22mohm @ 10V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 6 A | ||
Resistance Drain-Source RDS (on) : | 22 mOhms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |