SI4910DY-T1-GE3

MOSFET 40V 6.0A 3.1W 27mohm @ 10V

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SI4910DY-T1-GE3 Picture
SeekIC No. : 00153245 Detail

SI4910DY-T1-GE3: MOSFET 40V 6.0A 3.1W 27mohm @ 10V

floor Price/Ceiling Price

US $ .43~.6 / Piece | Get Latest Price
Part Number:
SI4910DY-T1-GE3
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~50
  • 50~100
  • Unit Price
  • $.6
  • $.47
  • $.46
  • $.43
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/5/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 40 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 27 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 40 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 6 A
Configuration : Dual
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 27 mOhms


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