SI9426DY

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 10.5 A
Resistance Drain-Source RDS (on) : 12 m Ohms


Features:

• 10.5 A, 20 V. RDS(ON) = 13.5 m @ VGS = 4.5 V
  RDS(ON) = 16 m @ VGS = 2.7 V
• High cell density for extremely low RDS(ON)
• High power and current handling capability in a widely
  used surface mount package


Application

• DC/DC converter
• Load switch


Pinout




Specifications

Symbol	Parameter	Ratings	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±8	V
ID	Drain Current - Continuous (Note 1a) - Pulsed	10.5	A
		30
PD	Power Dissipation for Dual Operation	2.5	W
	Power Dissipation for Single Operation (Note 1a (Note 1b) (Note 1c)	1.2
		1
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C
THERMAL CHARACTERISTICS
RJA	Thermal Resistance, Junction-to-Ambient (Note 1a)	50	°C/W
RJC	Thermal Resistance, Junction-to-Case (Note 1)	25	°C/W

Description

This SI9426DY N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's high cell density DMOS technology process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These SI9426DY devices have been designed to offer exceptional power dissipation in a very small footprint package.