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SIA513DJ-T1-GE3

MOSFET N/P-Ch MOSFET 20V 60/110mohms@4.5V

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SeekIC No. : 00160842 Detail

SIA513DJ-T1-GE3: MOSFET N/P-Ch MOSFET 20V 60/110mohms@4.5V

SIA513DJ-T1-GE3 Data Sheet

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Part Number:
SIA513DJ-T1-GE3
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/6/16

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Product Details

Quick Details

Transistor Polarity : N and P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 4.5 A
Resistance Drain-Source RDS (on) : 60 mOhms, 110 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : PowerPAK SC-70-6 Dual Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual
Transistor Polarity : N and P-Channel
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 4.5 A
Package / Case : PowerPAK SC-70-6 Dual
Resistance Drain-Source RDS (on) : 60 mOhms, 110 mOhms


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