MOSFET 20V 2.6A 3.1W 295mohm @ 4.5V
SIB911DK-T1-GE3: MOSFET 20V 2.6A 3.1W 295mohm @ 4.5V
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
| Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 1.5 A | ||
| Resistance Drain-Source RDS (on) : | 295 mOhms | Configuration : | Dual | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | PowerPAK SC-70-6 Dual | Packaging : | Reel |