SIDC03D60F6

DIODE FAST SW 600V 6A WAFER

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SeekIC No. : 003427531 Detail

SIDC03D60F6: DIODE FAST SW 600V 6A WAFER

floor Price/Ceiling Price

Part Number:
SIDC03D60F6
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Series: - Manufacturer: Infineon Technologies
Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 6A (DC) Current - Average Rectified (Io) (per Diode): -
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 6A Speed: Fast Recovery = 200mA (Io)
Drain Current (Idss at Vgs=0) : 10 mA to 18 mA Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: -
Diode Configuration: - Mounting Type: Surface Mount
Package / Case: Wafer Supplier Device Package: Sawn on foil    

Description

Series: -
Diode Type: Standard
Current - Average Rectified (Io) (per Diode): -
Speed: Fast Recovery = 200mA (Io)
Diode Configuration: -
Mounting Type: Surface Mount
Reverse Recovery Time (trr): -
Capacitance @ Vr, F: -
Voltage - DC Reverse (Vr) (Max): 600V
Packaging: Bulk
Manufacturer: Infineon Technologies
Current - Average Rectified (Io): 6A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 6A
Package / Case: Wafer
Supplier Device Package: Sawn on foil
Current - Reverse Leakage @ Vr: 27µA @ 600V


Features:

` 600V EMCON technology 70 m chip
` soft , fast switching
` low reverse recovery charge
` small temperature coefficient



Application

· SMPS, resonant applications, drives


Specifications

Parameter Symbol Condition Value Unit
Repetitive peak reverse voltage VRRM   600 V
Continuous forward current limited by
Tjmax
IF   6 A
Single pulse forward current
(depending on wire bond configuration)
IFSM tP = 10 ms sinusoidal tbd
MMaximum repetitive forward current
limited by Tjmax
(depending on wire bond configuration)
IFRM   12
Operating junction and storage
temperature
Tj , Tstg   -55...+150 °C



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