SIDC11D60SIC3

Series: -
Current - Average Rectified (Io) (per Diode): -
Diode Configuration: -
Mounting Type: Surface Mount
Voltage - DC Reverse (Vr) (Max): 600V
Packaging: Bulk
Diode Type: Silicon Carbide Schottky
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 200µA @ 600V
Capacitance @ Vr, F: 150pF @ 1V, 1MHz
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 4A
Manufacturer: Infineon Technologies
Current - Average Rectified (Io): 4A (DC)
Package / Case: Wafer
Supplier Device Package: Sawn on foil


Features:

· Worlds first 600V Schottky diode
· Revolutionary semiconductor material - Silicon Carbide
· Switching behavior benchmark
· No reverse recovery
· No temperature influence on the switching behavior
· Ideal diode for Power Factor Correction
· No forward recovery


Application

· SMPS, PFC, snubber


Specifications

Parameter	Symbol	Condition	Value	Unit
Repetitive peak reverse voltage	VRRM		600	V
Non repetitive peak forward current	VRSM		600
Continuous forward current limited by Tjmax	IF		4	A
Single pulse forward current (depending on wire bond configuration)	IFSM	TC =25° C, tP =10 ms sinusoidal	12.5
Maximum repetitive forward current limited by Tjmax	IFRM	TC = 100°C, Tj=150°C, D=0.1	18
Non repetitive peak forward current	IFMAX	TC =25°C, tp=10s	40
Operating junction and storage temperature	Tj,Tstg		-55...+175	°C