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SeekIC No. : 003427403 Detail

SIDC42D120H6: DIODE FAST SW 1200V 75A WAFER

SIDC42D120H6 Data Sheet

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Part Number:: SIDC42D120H6
Mfg:
Supply Ability:: 5000

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15 Days

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Upload time: 2025/12/25

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Product Details

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Series:	-	Manufacturer:	Infineon Technologies
Diode Type:	Standard	Voltage - DC Reverse (Vr) (Max):	1200V (1.2kV)
Current - Average Rectified (Io):	75A (DC)	Current - Average Rectified (Io) (per Diode):	-
Voltage - Forward (Vf) (Max) @ If:	1.6V @ 75A	Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	-	Drain Current (Idss at Vgs=0) :	10 mA to 18 mA
Current - Reverse Leakage @ Vr:	27µA @ 1200V	Capacitance @ Vr, F:	-
Diode Configuration:	-	Mounting Type:	Surface Mount
Package / Case:	Wafer	Supplier Device Package:	Sawn on foil

Description

Series: -
Diode Type: Standard
Current - Average Rectified (Io) (per Diode): -
Diode Configuration: -
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Capacitance @ Vr, F: -
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV)
Manufacturer: Infineon Technologies
Current - Reverse Leakage @ Vr: 27µA @ 1200V
Package / Case: Wafer
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 75A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 75A

Features:

· 1200V EMCON technology 120 µm chip
· soft, fast switching
· low reverse recovery charge
· small temperature coefficient

Application

· SMPS, resonant applications, drives

Specifications

Parameter	Symbol	Condition	Value	Unit
Repetitive peak reverse voltage	V_RRM		1200	V
Continuous forward current limited by Tjmax	F		75	A
Single pulse forward current (depending on wire bond configuration)	I_FSM	tP = 10 ms sinusoidal	tbd
Maximum repetitive forward current limited by Tjmax	I_FRM		150
Operating junction and storage temperature	T_j, T_stg		-55...+150	°C

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SIDC42D120H6

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