DIODE FAST SW 1700V 100A WAFER
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| Series: | - | Manufacturer: | Infineon Technologies | ||
| Diode Type: | Standard | Voltage - DC Reverse (Vr) (Max): | 1700V (1.7kV) | ||
| Current - Average Rectified (Io): | 100A (DC) | Current - Average Rectified (Io) (per Diode): | - | ||
| Voltage - Forward (Vf) (Max) @ If: | 1.8V @ 100A | Speed: | Standard Recovery >500ns, > 200mA (Io) | ||
| Reverse Recovery Time (trr): | - | Drain Current (Idss at Vgs=0) : | 10 mA to 18 mA | ||
| Current - Reverse Leakage @ Vr: | 27µA @ 1700V | Capacitance @ Vr, F: | - | ||
| Diode Configuration: | - | Mounting Type: | Surface Mount | ||
| Package / Case: | Wafer | Supplier Device Package: | Sawn on foil |
|
Parameter |
Symbol |
Condition |
Value |
Unit |
| Repetitive peak reverse voltage |
VRRM |
1700 |
V | |
| Continuous forward current limited by Tjmax |
IF |
100 |
A | |
| Single pulse forward current (depending on wire bond configuration) |
IFSM |
tP = 10 ms sinusoidal |
tbd | |
| Maximum repetitive forward current limited by Tjmax |
IFRM |
200 | ||
| Operating junction and storage temperature |
Tj,Tstg |
-55...+150 |
°C |