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SeekIC No. : 003427397 Detail

SIDC85D170H: DIODE FAST SW 1700V 150A WAFER

SIDC85D170H Data Sheet

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Part Number:: SIDC85D170H
Mfg:
Supply Ability:: 5000

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Upload time: 2025/12/25

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Product Details

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Series:	-	Manufacturer:	Infineon Technologies
Diode Type:	Standard	Voltage - DC Reverse (Vr) (Max):	1700V (1.7kV)
Current - Average Rectified (Io):	150A (DC)	Current - Average Rectified (Io) (per Diode):	-
Voltage - Forward (Vf) (Max) @ If:	1.8V @ 150A	Speed:	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):	-	Drain Current (Idss at Vgs=0) :	10 mA to 18 mA
Current - Reverse Leakage @ Vr:	27µA @ 1700V	Capacitance @ Vr, F:	-
Diode Configuration:	-	Mounting Type:	Surface Mount
Package / Case:	Wafer	Supplier Device Package:	Sawn on foil

Description

Series: -
Diode Type: Standard
Current - Average Rectified (Io) (per Diode): -
Diode Configuration: -
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Capacitance @ Vr, F: -
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 1700V (1.7kV)
Manufacturer: Infineon Technologies
Current - Average Rectified (Io): 150A (DC)
Package / Case: Wafer
Supplier Device Package: Sawn on foil
Current - Reverse Leakage @ Vr: 27µA @ 1700V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 150A

Features:

` 1700V EMCON 3 technology 200 m chip
` soft, fast switching
` low reverse recovery charge
` small temperature coefficient

Application

· resonant applications, drives

Specifications

Parameter	Symbol	Condition	Value	Unit
Repetitive peak reverse voltage	V_RRM		1700	V
Continuous forward current limited by	I_F		150	A
T_jmax	I_F		150
Single pulse forward current (depending on wire bond configuration)	I_FSM	t_P = 10 ms sinusoidal	tbd
Maximum repetitive forward current limited by T_jmax	I_FRM		300
Operating junction and storage temperature	T_{j ,} T_stg		-55...+150	°C

Description

SIDC85D170H: Fast switching diode chip in EMCON 3 -Technology

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SIDC85D170H

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