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SIGC156T120R2C

Features: ` 1200V NPT technology 200m chip` low turn-off losses` short tail current` positive temperature coefficient` easy paralleling` integrated gate resistorApplication· drivesSpecifications Parameter Symbol Value Unit Collector-emitter voltage, Tj=25 °CDC collector current, limit...

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SIGC156T120R2C: Features: ` 1200V NPT technology 200m chip` low turn-off losses` short tail current` positive temperature coefficient` easy paralleling` integrated gate resistorApplication· drivesSpecifications ...

SIGC156T120R2C Data Sheet

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Part Number:
SIGC156T120R2C
Supply Ability:
5000

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  • 1~5000
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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` 1200V NPT technology 200m chip
` low turn-off losses
` short tail current
` positive temperature coefficient
` easy paralleling
` integrated gate resistor


Application

· drives


Specifications

Parameter Symbol Value Unit
Collector-emitter voltage, Tj=25 °C
DC collector current, limited by Tjmax
Pulsed collector current, tp limited by Tjmax
Gate emitter voltage
Operating junction and storage temperature
VCE
IC
I cpuls
VGE
Tj, Ts t g
1200
1 )
300
±20
-55 ... +150
V
A
A
V
°C
1 ) depending on thermal properties of assembly


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