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SML60J35

Features: • Faster Switching• Lower Leakage• 100% Avalanche Tested• Popular SOT227 PackageSpecifications VDSS Drain Source Voltage 600 V ID Continuous Drain Current 35 A IDM Pulsed Drain Current 1 140 A ...

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SeekIC No. : 004495281 Detail

SML60J35: Features: • Faster Switching• Lower Leakage• 100% Avalanche Tested• Popular SOT227 PackageSpecifications VDSS Drain Sour...

SML60J35 Data Sheet

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Part Number:
SML60J35
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular SOT227 Package


Specifications

VDSS









 Drain Source Voltage








 600 V



ID Continuous Drain Current 35 A
IDM Pulsed Drain Current 1 140 A
VGS Gate Source Voltage ±30 V
VGSM Gate Source Voltage Transient ±40
PD Total Power Dissipation @ Tcase = 25°C
Derate Linearly		 450
3.6		 W
TJ , TSTG Operating and Storage Junction Temperature Range 55 to 150 W/°C
TL
Lead Temperature : 0.063" from Case for 10 Sec.		 300 °C
IAR Avalanche Current1 (Repetitive and Non-Repetitive)
35
EAR Repetitive Avalanche Energy 1 50 A
EAS Single Pulse Avalanche Energy 2








2500		 mJ






Description

StarMOS SML60J35 is a new generation of high voltage NChannel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS SML60J35 also achieves faster switching speeds through optimised gate layout.




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