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SML60H20

Features: •Faster Switching•Lower Leakage•TO258 Hermetic PackageSpecifications ABSOLUTE MAXIMUM RATINGS (Tcase= 25°C unless otherwise stated) VDSS Drain Source Voltage 600 V ID ...

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SeekIC No. : 004495280 Detail

SML60H20: Features: •Faster Switching•Lower Leakage•TO258 Hermetic PackageSpecifications ABSOLUTE MAXIMUM RATINGS (Tcase= 25°C unless otherwise stated) ...

SML60H20 Data Sheet

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Part Number:
SML60H20
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

•Faster Switching
•Lower Leakage
•TO258 Hermetic Package


Specifications

ABSOLUTE MAXIMUM RATINGS (Tcase= 25°C unless otherwise stated)
VDSS

 Drain Source Voltage 600 V
ID

 Continuous Drain Current 20 A
IDM

 Pulsed Drain Current 1 80 A
V

 Gate Source Voltage ±30 A
VGSM

 Gate Source Voltage Transient ±40
PD Total Power Dissipation @ Tcase= 25°C

 250 W
Derate Linearly

 2.0 W/°C
TJ,TSTG

 Operating and Storage Junction Temperature Range 55 to 150 °C
TL

 Lead Temperature : 0.063" from Case for 10 Sec. 300
IAR

 Avalanche Current1(Repetitive and Non-Repetitive) 20 A
EAR

 Repetitive Avalanche Energy 1 30 mJ
EAS

 Single Pulse Avalanche Energy 2 1300



Description

StarMOS SML60H20 is a new generation of high voltage NChannel enhancement mode power MOSFETs.This new technology minimises the JFET effect,increases packing density and reduces the on-resistance. StarMOS SML60H20 also achieves faster switching speeds through optimised gate layout.


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