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SML60B18

Features: • Faster Switching• Lower Leakage• 100% Avalanche Tested• Popular TO247 PackageSpecifications VDSS Drain Source Voltage Max. V ID Continuous Drain Current 18 A IDM Pulsed Drain Current 1 72 A VGS Gate Source Voltage ±20 V VGSM Gate ...

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SeekIC No. : 004495279 Detail

SML60B18: Features: • Faster Switching• Lower Leakage• 100% Avalanche Tested• Popular TO247 PackageSpecifications VDSS Drain Source Voltage Max. V ID Continuous Drain Curr...

SML60B18 Data Sheet

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Part Number:
SML60B18
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular TO247 Package



Specifications

VDSS




 Drain Source Voltage Max. V
ID
 Continuous Drain Current 18 A
IDM Pulsed Drain Current 1 72 A
VGS Gate Source Voltage ±20 V
VGSM Gate Source Voltage Transient ±30
PD Total Power Dissipation @ Tcase = 25°C 280 W
Derate Linearly 2.24 W/°C
TJ , TSTG Operating and Storage Junction Temperature Range 55to150 °C
TL Lead Temperature : 0.063" from Case for 10 Sec. 300
IAR Avalanche Current1 (Repetitive and Non-Repetitive) 18 A
EAR Repetitive Avalanche Energy 30  
EAS EAS
Single Pulse Avalanche Energy 2
 1210 mJ



Description

StarMOS SML60B18 is a new generation of high voltage NChannel enhancement mode power MOSFETs.This new technology minimises the JFET effect, increases packing density and reduces the
on-resistance. StarMOS SML60B18 also achieves faster switching speeds through optimised gate layout.




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