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SML60W32

Features: • Faster Switching• Lower Leakage• TO267 Hermetic PackageSpecifications VDSS Drain Source Voltage 600 V ID Continuous Drain Current 38 A IDM Pulsed Drain Current 1 152 A VGS Gate Source Voltage ±30 V VGSM Gate Source Voltage Transient ±...

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SeekIC No. : 004495284 Detail

SML60W32: Features: • Faster Switching• Lower Leakage• TO267 Hermetic PackageSpecifications VDSS Drain Source Voltage 600 V ID Continuous Drain Current 38 A IDM Pulsed Dra...

SML60W32 Data Sheet

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Part Number:
SML60W32
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Description



Features:

• Faster Switching
• Lower Leakage
• TO267 Hermetic Package


Specifications

VDSS









 Drain Source Voltage










 600










 V







ID Continuous Drain Current 38 A
IDM Pulsed Drain Current 1 152 A
VGS Gate Source Voltage ±30 V
VGSM Gate Source Voltage Transient ±40
PD Total Power Dissipation @ Tcase = 25°C 520 W
Derate Linearly 4.16 W/°C
TJ , TSTG Operating and Storage Junction Temperature Range 55 to 150 °C
TL Lead Temperature : 0.063" from Case for 10 Sec. 300
IAR Avalanche Current1 (Repetitive and Non-Repetitive) 38 A
EAR Repetitive Avalanche Energy 1 50 mJ
EAS Single Pulse Avalanche Energy 2 2500



Description

StarMOS SML60W32 is a new generation of high voltage NChannel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS SML60W32 also achieves faster switching speeds through optimised gate layout.


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