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SPA11N80C3

MOSFET MOSFET N-Channel

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SeekIC No. : 00146594 Detail

SPA11N80C3: MOSFET MOSFET N-Channel

SPA11N80C3 Data Sheet

floor Price/Ceiling Price

US $ 1.31~2.03 / Piece | Get Latest Price
Part Number:
SPA11N80C3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
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  • 10~100
  • 100~250
  • Unit Price
  • $2.03
  • $1.63
  • $1.48
  • $1.31
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.45 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Continuous Drain Current : 11 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.45 Ohms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)


Specifications

Parameter Symbol Value Unit
SPP SPA
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 11
7.1		 111)
7.11)		 A
Pulsed drain current, tp limited by Tjmax ID puls 33 33 A
Avalanche energy, single pulse
ID=2.2A, VDD=50V		 EAS 470 470 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V		 EAR 0.2 0.2
Avalanche current, repetitive tAR limited by Tjmax IAR 11 11 A
Gate source voltage VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30
Power dissipation, TC = 25°C Ptot 156 41 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 640 V, ID = 11 A, Tj = 125 °C		 dv/dt 50 V/ns

2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.


Parameters:

Technical/Catalog InformationSPA11N80C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs450 mOhm @ 7.1A, 10V
Input Capacitance (Ciss) @ Vds 1600pF @ 100V
Power - Max41W
PackagingTube
Gate Charge (Qg) @ Vgs85nC @ 10V
Package / CaseTO-220FP
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPA11N80C3
SPA11N80C3
SPA11N80C3IN ND
SPA11N80C3INND
SPA11N80C3IN



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