Position: Home  > All Categories> Integrated Circuits (ICs) > SPA11N80C3

SPA11N80C3

MOSFET MOSFET N-Channel

product image

SPA11N80C3 Picture
See larger image
SeekIC No. : 00146594 Detail

SPA11N80C3: MOSFET MOSFET N-Channel

SPA11N80C3 Data Sheet

floor Price/Ceiling Price

US $ 1.31~2.03 / Piece | Get Latest Price
Part Number:
SPA11N80C3
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $2.03
  • $1.63
  • $1.48
  • $1.31
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/20

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.45 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220FP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Continuous Drain Current : 11 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 0.45 Ohms


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)


Specifications

Parameter Symbol Value Unit
SPP SPA
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 11
7.1		 111)
7.11)		 A
Pulsed drain current, tp limited by Tjmax ID puls 33 33 A
Avalanche energy, single pulse
ID=2.2A, VDD=50V		 EAS 470 470 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V		 EAR 0.2 0.2
Avalanche current, repetitive tAR limited by Tjmax IAR 11 11 A
Gate source voltage VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30
Power dissipation, TC = 25°C Ptot 156 41 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 640 V, ID = 11 A, Tj = 125 °C		 dv/dt 50 V/ns

2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.


Parameters:

Technical/Catalog InformationSPA11N80C3
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs450 mOhm @ 7.1A, 10V
Input Capacitance (Ciss) @ Vds 1600pF @ 100V
Power - Max41W
PackagingTube
Gate Charge (Qg) @ Vgs85nC @ 10V
Package / CaseTO-220FP
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPA11N80C3
SPA11N80C3
SPA11N80C3IN ND
SPA11N80C3INND
SPA11N80C3IN



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Undefined Category
VI-B63-IU
X27 589
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Discrete Semiconductor Products
T508N12TOF
MUR20040
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
RF and RFID
X3C26P1-30S
1P620S
View more