SPB80N03S2L-06

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Gate Charge (Qg) @ Vgs: 68nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Power - Max: 150W
Current - Continuous Drain (Id) @ 25° C: 80A
Input Capacitance (Ciss) @ Vds: 2530pF @ 25V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: P-TO263-3
Vgs(th) (Max) @ Id: 2V @ 80µA
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 80A, 10V


Features:

· N-Channel
· Enhancement mode
· Logic Level
· Low On-Resistance RDS(on)
· Excellent Gate Charge x R_DS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated

Specifications

Parameter	Symbol	Value	Unit
Continuous drain current 1) TC = 25 °C	ID	80 80	A
Pulsed drain current TC = 25 °C	ID puls	320
Avalanche energy, single pulse ID =20A, VDD = 25 V, RGS = 25	EAS	240	mJ
Repetitive avalanche energy, limited by Tjmax 2)	EAR	15
Reverse diode dv/dt IS = 80 A, VDS = 24 , di/dt = 200 A/s, Tjmax = 175 °C	dv/dt	6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TC = 25 °C	Ptot	150	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

¹Current limited by bondwire ; with an R_thJC = 0.5K/W the chip is able to carry I_D= 307A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
²Defined by design. Not subject to production test

Parameters:

Technical/Catalog Information	SPB80N03S2L-06
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	5.9 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds	2530pF @ 25V
Power - Max	150W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	68nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SPB80N03S2L 06 SPB80N03S2L06 SPB80N03S2L06INCT ND SPB80N03S2L06INCTND SPB80N03S2L06INCT