Position: Home  > All Categories> Integrated Circuits (ICs) > SPB80N06S-08

SPB80N06S-08

MOSFET N-CH 55V 80 A

product image

SPB80N06S-08 Picture
See larger image
SeekIC No. : 00159036 Detail

SPB80N06S-08: MOSFET N-CH 55V 80 A

SPB80N06S-08 Data Sheet

floor Price/Ceiling Price

US $ .9~1.39 / Piece | Get Latest Price
Part Number:
SPB80N06S-08
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~490
  • 490~500
  • 500~1000
  • 1000~2000
  • Unit Price
  • $1.39
  • $1.13
  • $.95
  • $.9
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 8 m Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 8 m Ohms


Features:

• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Avalanche test
• Repetive Avalanche up to
  Tjmax = 175 °C
• dv /dt rated


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current1) I D T C=25 °C, VGS=10 V 80 A
T C=100 °C, VGS=10 V 80
Pulsed drain current2) I D,pulse T C=25 °C 320
Avalanche energy, single pulse EAS I D=80 A, RGS=25 ,
VDD=25 V		 700 mJ
Avalanche energy, periodic2) EAR T j175 °C 30
Reverse diode dv /dt 2) dv /dt I D=80 A, VDS=40 V,
di /dt =200 A/s,
T j,max=175 °C		 6 kV/s
Gate source voltage VGS   ±20 V
Power dissipation Ptot T C=25 °C 300 W
Operating and storage temperature T j, T stg   -55 ... +175 °C
IEC climatic category; DIN IEC 68-1     55/175/56  



Parameters:

Technical/Catalog InformationSPB80N06S-08
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs7.7 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 3660pF @ 25V
Power - Max300W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs187nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SPB80N06S 08
SPB80N06S08



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Transformers
TM-09210
BV222-1-00992
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Circuit Protection
A50QS75-4Y
F-17*77
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
View more