SPB80N10L

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 100V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power - Max: 250W
Gate Charge (Qg) @ Vgs: 240nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 80A
Series: SIPMOS®
Manufacturer: Infineon Technologies
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: P-TO263-3
Input Capacitance (Ciss) @ Vds: 4540pF @ 25V
Rds On (Max) @ Id, Vgs: 14 mOhm @ 58A, 10V


Features:

· N-Channel
· Enhancement mode
· Logic Level
·175°C operating temperature
· Avalanche rated
· dv/dt rated

Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C TC = 100 °C	ID	80 58	A
Pulsed drain current TC = 25 °C	ID puls	320
Avalanche energy, single pulse ID =80A, VDD = 25 V, RGS = 25	EAS	700	mJ
Avalanche energy, periodic limited by Tjmax	EAR	25
Reverse diode dv/dt IS = 80A, VDS = 0 V, di/dt = 200 A/s	dv/dt	6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TC = 25 °C	Ptot	250	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

Parameters:

Technical/Catalog Information	SPB80N10L
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	14 mOhm @ 58A, 10V
Input Capacitance (Ciss) @ Vds	4540pF @ 25V
Power - Max	250W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	240nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SPB80N10L SPB80N10L