SPBI11N60C3

The SPBI11N60C3 is one member of the SPBI11 family which is designed as the cool MOS Power transistor that has some points of features such as:(1)New revolutionary high voltage technology; (2)Worldwide best RDS(on) in TO 220; (3)Ultra low gate charge; (4)Periodic avalanche rated; (5)Extreme dv/dt rated; (6)High peak current capability; (7)Improved transconductance; (8)150 operating temperature.

The absolute maximum ratings of the SPBI11N60C3 can be summarized as:(1)Continuous drain current TC = 25 °C: 11 A;(2)Continuous drain current TC = 100 °C: 7 A;(3)Pulsed drain current, tp limited by Tjmax: 33 A;(4)Avalanche energy, single pulse ID=5.5A, VDD=50V: 340 mJ;(5)Avalanche energy, repetitive tAR limited by Tjmax: 0.6 mJ;(6)Avalanche current, repetitive tAR limited by Tjmax: 11 A;(7)Reverse diode dv/dt: 6 V/ns;(8)Gate source voltage static: ±20 V;(9)Gate source voltage dynamic: ±30 V;(10)Power dissipation, TC = 25°C: 125 W;(11)Operating and storage temperature: -55 to +150 °C. If you want to know more information such as the electrical characteristics about the SPBI11N60C3, please download the datasheet in www.seekic.com or www.chinaicmart.com.