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SPD03N60C3

MOSFET MOSFET N-Channel

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SeekIC No. : 00146361 Detail

SPD03N60C3: MOSFET MOSFET N-Channel

SPD03N60C3 Data Sheet

floor Price/Ceiling Price

US $ .5~.8 / Piece | Get Latest Price
Part Number:
SPD03N60C3
Mfg:
Infineon Technologies
Supply Ability:
5000

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  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.8
  • $.63
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  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3.2 A
Resistance Drain-Source RDS (on) : 1.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 1.4 Ohms
Continuous Drain Current : 3.2 A


Features:

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance


Specifications

Parameter Symbol Value Unit
Continuous drain current
TC = 25 °C
TC = 100 °C		 ID 3.2 A
Pulsed drain current, tp limited by Tjmax ID puls 9.6
Avalanche energy, single pulse
ID=2.4A, VDD=50V		 EAS 100 mJ
Avalanche energy, repetitive tAR limited by Tjmax1)
ID=3.2A, VDD=50V		 EAR 0.2
Avalanche current, repetitive tAR limited by Tjmax IAR 3.2 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, TC = 25°C Ptot 38 W
Operating and storage temperature Tj , Tstg -55...+150 °C
Drain Source voltage slope
VDS = 480 V, ID = 3.2A, Tj = 125 °C		 dv/dt 50 V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.




Parameters:

Technical/Catalog InformationSPD03N60C3
VendorInfineon Technologies (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C3.2A
Rds On (Max) @ Id, Vgs1.4 Ohm @ 2A, 10V
Input Capacitance (Ciss) @ Vds 400pF @ 25V
Power - Max38W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs17nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SPD03N60C3
SPD03N60C3
SPD03N60C3INDKR ND
SPD03N60C3INDKRND
SPD03N60C3INDKR



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