SPD30N03S2L-10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 30 A
Package / Case : TO-252
Resistance Drain-Source RDS (on) : 10.4 m Ohms


Features:

· N-Channel
· Enhancement mode
· Logic Level
· Low On-Resistance RDS(on)
· Excellent Gate Charge x R_DS(on) product (FOM)
· Superior thermal resistance
· 175°C operating temperature
· Avalanche rated
· dv/dt rated

Specifications

Parameter	Symbol	Value	Unit
Continuous drain current 1) TC = 25 °C	ID	30 30	A
Pulsed drain current TC = 25 °C	ID puls	120
Avalanche energy, single pulse ID =30A, VDD = 25 V, RGS = 25	EAS	150	mJ
Repetitive avalanche energy, limited by Tjmax 2)	EAR	10
Reverse diode dv/dt IS =30 A, VDS =24V, di/dt = 200 A/s,Tjmax=175°C	dv/dt	6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TC = 25 °C	Ptot	100	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

^₁ Current limited by bondwire ; with an R_thJC = 1.5K/W the chip is able to carry I_D= 76A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
_² Defined by design. Not subject to production test

Parameters:

Technical/Catalog Information	SPD30N03S2L-10
Vendor	Infineon Technologies (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	30A
Rds On (Max) @ Id, Vgs	10 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	1550pF @ 25V
Power - Max	100W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	41.8nC @ 10V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SPD30N03S2L 10 SPD30N03S2L10 SPD30N03S2L10INCT ND SPD30N03S2L10INCTND SPD30N03S2L10INCT