SPD50N06S2L-13

MOSFET N-CH 55V 50A DPAK

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SPD50N06S2L-13: MOSFET N-CH 55V 50A DPAK

floor Price/Ceiling Price

Part Number:
SPD50N06S2L-13
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Series: OptiMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Continuous Drain Current : 15 A Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 50A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 12.7 mOhm @ 34A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) @ Vgs: 69nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2300pF @ 25V
Power - Max: 136W Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: P-TO252-3    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25° C: 50A
Drain to Source Voltage (Vdss): 55V
Gate Charge (Qg) @ Vgs: 69nC @ 10V
Power - Max: 136W
Input Capacitance (Ciss) @ Vds: 2300pF @ 25V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: P-TO252-3
Vgs(th) (Max) @ Id: 2V @ 80µA
Rds On (Max) @ Id, Vgs: 12.7 mOhm @ 34A, 10V


Features:

· N-Channel
· Enhancement mode
· Logic Level
· Avalanche rated
· dv/dt rated



Specifications

Parameter Symbol Value Unit
Continuous drain current1)
TC = 25 °C
ID 50
50
A
Pulsed drain current
TC = 25 °C
ID puls 200
Avalanche energy, single pulse
ID =50A, VDD = 25 V, RGS = 25
EAS 240 mJ
Repetitive avalanche energy, limited by Tjmax 2) EAR 13.6
Reverse diode dv/dt
IS =50 A, VDS =44V, di/dt = 200 A/s,Tjmax=175°C
dv/dt 6 kV/s
Gate source voltage VGS ±20 V
Power dissipation
TC = 25 °C
Ptot 136 W
Operating and storage temperature Tj , Tstg -55... +175 °C
IEC climatic category; DIN IEC 68-1   55/175/56  

1 Current limited by bondwire ; with an RthJC = 1.1K/W the chip is able to carry ID= 72A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test




Parameters:

Technical/Catalog InformationSPD50N06S2L-13
VendorInfineon Technologies
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs12.7 mOhm @ 34A, 10V
Input Capacitance (Ciss) @ Vds 2300pF @ 25V
Power - Max136W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs69nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names SPD50N06S2L 13
SPD50N06S2L13



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