Features: • Fast Recovery: 150-500 ns Maximum 4 /• Single Chip Construction• PIV to 1000 Volts• Low Thermal Resistance• Low Reverse Leakage Current• Hermetically Sealed• High Surge Rating• Available in Axial and Surface Mount Versions• TX, TXV,...
SPD5615: Features: • Fast Recovery: 150-500 ns Maximum 4 /• Single Chip Construction• PIV to 1000 Volts• Low Thermal Resistance• Low Reverse Leakage Current• Hermetically ...
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|
RATING |
SYMBOL |
VALUE |
UNIT |
|
Peak Repetitive Reverse Voltage And DC Blocking Voltage SPD5615 SPD5617 SPD5619 SPD5621 SPD5623 |
V RRM V RWM VR |
200 400 600 800 1000 |
Volts |
|
Rectified Forward Forward Current TA = 55°C (Resistive Load, 60 Hz, Sine Wave) TA = 100°C |
I O1 IO2 |
1.00 0.75 |
Amp |
|
Peak Surge Current (8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach equilibrium between pulses, TA = 100°C) |
IFSM |
25 |
Amps |
|
Operating & Storage Temperature |
TOP and TSTG |
-65 to +175 |
°C |
|
Thermal Resistance, Junction to Lead, L = 3/8" (Axial) Junction to End Tab (SMS) |
R JL R JE |
38 7 |
°C/W |