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SPN2054

Features: ·20V/12A,RDS(ON)=40mΩ@VGS=10V·20V/ 7A,RDS(ON)=45mΩ@VGS=4.5V·20V/ 4A,RDS(ON)=50mΩ@VGS=2.5V·20V/ 2A,RDS(ON)=60mΩ@VGS=1.8V·Super high density cell design for extremely low RDS (ON)·Exceptional on-resistance and maximum DC current capability·TO-252-2L package designAp...

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SeekIC No. : 004501280 Detail

SPN2054: Features: ·20V/12A,RDS(ON)=40mΩ@VGS=10V·20V/ 7A,RDS(ON)=45mΩ@VGS=4.5V·20V/ 4A,RDS(ON)=50mΩ@VGS=2.5V·20V/ 2A,RDS(ON)=60mΩ@VGS=1.8V·Super high density cell design for extremely...

SPN2054 Data Sheet

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Part Number:
SPN2054
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·20V/12A,RDS(ON)=40mΩ@VGS=10V
·20V/ 7A,RDS(ON)=45mΩ@VGS=4.5V
·20V/ 4A,RDS(ON)=50mΩ@VGS=2.5V
·20V/ 2A,RDS(ON)=60mΩ@VGS=1.8V
·Super high density cell design for extremely low RDS (ON)
·Exceptional on-resistance and maximum DC current capability
·TO-252-2L package design


Application

·Power Management in Desktop Computer
·DC/DC Converter
·LCD Display inverter


Pinout

Connection Diagram


Specifications

Parameter Symbol Typical Unit
Drain-Source Voltage VDSS 20 V
Gate Source Voltage VGSS ±12 V
Continuous Drain Current(TJ=150 ) TA=25 ID 12 A
TA=70 8
Pulsed Drain Current IDM
 20 A
Continuous Source Current(Diode Conduction) IS 12 A
Power Dissipation TA=25 PD 40 W
TA=70 20
Operating Junction Temperature
 TJ -55/150
Storage Temperature Range TSTG -55/150
Thermal Resistance-Junction to Ambient RJA 105 /W



Description

The SPN2054 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as DC/DC converter and Desktop computer power management.

The package SPN2054 is universally preferred for commercial industrial surface mount applications




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