Features: ·20V/4.0A,RDS(ON)=75mΩ@VGS=4.5V·20V/3.4A,RDS(ON)=95mΩ@VGS=2.5V·20V/2.8A,RDS(ON)=135mΩ@VGS=1.8V·Super high density cell design for extremely low RDS (ON)·Exceptional on-resistance and maximum DC current capability·SOT-23-3L package designApplication·Power Management in N...
SPN2302A: Features: ·20V/4.0A,RDS(ON)=75mΩ@VGS=4.5V·20V/3.4A,RDS(ON)=95mΩ@VGS=2.5V·20V/2.8A,RDS(ON)=135mΩ@VGS=1.8V·Super high density cell design for extremely low RDS (ON)·Exceptional on-re...
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| Parameter | Symbol | Typical | Unit | |
| Drain-Source Voltage | VDSS | 20 | V | |
| Gate Source Voltage | VGSS | ±12 | V | |
| Continuous Drain Current(TJ=150 ) | TA=25 | ID | 4.0 | A |
| TA=70 | 3.4 | |||
| Pulsed Drain Current | IDM |
10 | A | |
| Continuous Source Current(Diode Conduction) | IS | 1.6 | A | |
| Power Dissipation | TA=25 | PD | 1.25 | W |
| TA=70 | 0.8 | |||
| Operating Junction Temperature |
TJ | -55/150 | ||
| Storage Temperature Range | TSTG | -55/150 | ||
| Thermal Resistance-Junction to Ambient | RJA | 105 | /W | |
The SPN2302A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices SPN2302A are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.